Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO | Scientific Reports
Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME) - ScienceDirect
a) Time-integrated PL of highly excited MBE-grown InGaN/InGaN MQWs at... | Download Scientific Diagram
Optical Confinement Study of Laser MBE Grown InGaN/GaN Quantum Well Structure using Surface Plasmon Resonance Technique | SpringerLink
N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs
Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes<xref ref-type="fn" rid="cpb150161fn1">*</xref>
Crystals | Free Full-Text | Progress of InGaN-Based Red Micro-Light Emitting Diodes
Nanomaterials | Free Full-Text | Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy
Full-Color InGaN/AlGaN Nanowire Light-Emitting Diodes for SSL and Displays — LED professional - LED Lighting Technology, Application Magazine
SONATA wide QW | MBE Lab UNIPRESS
PL spectra as a function of sample temperature for an InGaN sample... | Download Scientific Diagram
PDF) Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode | Aliaksei Vainilovich - Academia.edu
Nanomaterials | Free Full-Text | InGaN Nanorods Decorated with Au Nanoparticles for Enhanced Water Splitting Based on Surface Plasmon Resonance Effects
Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes<xref ref-type="fn" rid="cpb150161fn1">*</xref>
IBPOWER Kick off meeting – 07/02/08 Specific issues relating to plasma-MBE Growth under group III-rich versus group V-rich conditions Control of composition. - ppt download
Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties | Materials Research Society Internet Journal of Nitride Semiconductor Research | Cambridge Core
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer | Scientific Reports
Tunneling to green light emission with improved efficiency performance
Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers | Scientific Reports
a) Schematic illustration of the InGaN‐based LED structure grown on... | Download Scientific Diagram
PDF) Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE | Ph. Komninou - Academia.edu
High-quality InN films on GaN using graded InGaN buffers by MBE
